Maximum Drain Source Voltage:
650 V
Typical Gate Charge @ Vgs:
48.5 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
38.5 W
Series:
UniFET
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
15.87mm
Width:
4.7mm
Length:
10.16mm
Minimum Gate Threshold Voltage:
3V
Package Type:
TO-220F
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
15 A
Transistor Material:
Si
Maximum Drain Source Resistance:
440 mΩ
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Rds On (Max) @ Id, Vgs:
440mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
63 nC @ 10 V
Vgs(th) (Max) @ Id:
5V @ 250µA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
Not Applicable
standardLeadTime:
26 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
3095 pF @ 25 V
Mounting Type:
Through Hole
Series:
UniFET™
Supplier Device Package:
TO-220F-3
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
15A (Tc)
Power Dissipation (Max):
38.5W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDPF15
ECCN:
EAR99
