Infineon IPW65R190E6FKSA1 N-channel MOSFET, 20 A, 700 V CoolMOS E6, 3-Pin TO-247
Product Information
Maximum Continuous Drain Current:
20 A
Transistor Material:
Si
Width:
21.1mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
700 V
Package Type:
TO-247
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
73 nC @ 10 V
Channel Type:
N
Length:
16.13mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
151 W
Series:
CoolMOS E6
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
5.21mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
0.9V
Maximum Drain Source Resistance:
190 mΩ
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This is N-channel MOSFET 20 A 700 V CoolMOS E6 3-Pin TO-247 manufactured by Infineon. The manufacturer part number is IPW65R190E6FKSA1. While 20 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 21.1mm wide. The product offers single transistor configuration. It has a maximum of 700 v drain source voltage. The package is a sort of to-247. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 73 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 16.13mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 151 w maximum power dissipation. The product coolmos e6, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 5.21mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 0.9v . It provides up to 190 mω maximum drain source resistance.
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