Infineon IPD60R750E6BTMA1 N-channel MOSFET, 5.7 A, 600 V CoolMOS E6, 3-Pin DPAK
Product Information
Category:
Power MOSFET
Dimensions:
6.73 x 6.22 x 2.41mm
Maximum Continuous Drain Current:
5.7 A
Transistor Material:
Si
Width:
6.22mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Drain Source Resistance:
1.76 Ω
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
17.2 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
373 pF @ 100 V
Length:
6.73mm
Pin Count:
3
Typical Turn-Off Delay Time:
50 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
48 W
Series:
CoolMOS E6
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
2.41mm
Typical Turn-On Delay Time:
9 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
0.9V
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This is N-channel MOSFET 5.7 A 600 V CoolMOS E6 3-Pin DPAK manufactured by Infineon. The manufacturer part number is IPD60R750E6BTMA1. It is of power mosfet category . The given dimensions of the product include 6.73 x 6.22 x 2.41mm. While 5.7 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 6.22mm wide. The product offers single transistor configuration. It has a maximum of 600 v drain source voltage. It provides up to 1.76 ω maximum drain source resistance. The package is a sort of dpak (to-252). It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 17.2 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 373 pf @ 100 v . Its accurate length is 6.73mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 50 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 48 w maximum power dissipation. The product coolmos e6, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 2.41mm. In addition, it has a typical 9 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 0.9v .
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