ON Semiconductor NTTFS5811NLTWG N-channel MOSFET, 17 A, 40 V, 8-Pin WDFN
Product Information
Maximum Continuous Drain Current:
17 A
Transistor Material:
Si
Width:
3.15mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
2.2V
Maximum Drain Source Resistance:
10 mΩ
Package Type:
WDFN
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
31 nC @ 10 V
Channel Type:
N
Length:
3.15mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
2.7 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.8mm
Minimum Operating Temperature:
-55 °C
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of ON Semiconductor NTTFS5811NLTWG N-channel MOSFET, 17 A, 40 V, 8-Pin WDFN. You can also check on our website or by contacting our customer support team for further order details on ON Semiconductor NTTFS5811NLTWG N-channel MOSFET, 17 A, 40 V, 8-Pin WDFN.
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Yes. We ship NTTFS5811NLTWG Internationally to many countries around the world.
This is N-channel MOSFET 17 A 40 V 8-Pin WDFN manufactured by ON Semiconductor. The manufacturer part number is NTTFS5811NLTWG. While 17 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 3.15mm wide. The product offers single transistor configuration. It has a maximum of 40 v drain source voltage. The product carries 2.2v of maximum gate threshold voltage. It provides up to 10 mω maximum drain source resistance. The package is a sort of wdfn. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 31 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 3.15mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 2.7 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 0.8mm. Whereas, the minimum operating temperature of the product is -55 °c.
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