ON Semiconductor BS170 N-channel MOSFET, 500 mA, 60 V, 3-Pin TO-92
Product Information
Maximum Drain Source Voltage:
60 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
830 mW
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
3V
Height:
5.33mm
Width:
4.19mm
Length:
5.2mm
Minimum Gate Threshold Voltage:
0.8V
Package Type:
TO-92
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
500 mA
Transistor Material:
Si
Maximum Drain Source Resistance:
5 Ω
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
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FAQs
Yes. You can also search BS170 on website for other similar products.
We accept all major payment methods for all products including ET16727170. Please check your shopping cart at the time of order.
You can order ON Semiconductor brand products with BS170 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of ON Semiconductor BS170 N-channel MOSFET, 500 mA, 60 V, 3-Pin TO-92. You can also check on our website or by contacting our customer support team for further order details on ON Semiconductor BS170 N-channel MOSFET, 500 mA, 60 V, 3-Pin TO-92.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET16727170 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET16727170.
Yes. We ship BS170 Internationally to many countries around the world.
This is N-channel MOSFET 500 mA 60 V 3-Pin TO-92 manufactured by ON Semiconductor. The manufacturer part number is BS170. It has a maximum of 60 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 830 mw maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 3v of maximum gate threshold voltage. In addition, the height is 5.33mm. Furthermore, the product is 4.19mm wide. Its accurate length is 5.2mm. Whereas its minimum gate threshold voltage includes 0.8v. The package is a sort of to-92. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 500 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 5 ω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
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