Diodes Inc ZXMP4A16GTA P-channel MOSFET, 6.4 A, 40 V, 3+Tab-Pin SOT-223
Product Information
Maximum Drain Source Voltage:
40 V
Typical Gate Charge @ Vgs:
26.1 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
3.9 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.8mm
Width:
3.7mm
Length:
6.7mm
Minimum Gate Threshold Voltage:
1V
Package Type:
SOT-223
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
6.4 A
Transistor Material:
Si
Maximum Drain Source Resistance:
100 mΩ
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
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You will get a confirmation email regarding your order of Diodes Inc ZXMP4A16GTA P-channel MOSFET, 6.4 A, 40 V, 3+Tab-Pin SOT-223. You can also check on our website or by contacting our customer support team for further order details on Diodes Inc ZXMP4A16GTA P-channel MOSFET, 6.4 A, 40 V, 3+Tab-Pin SOT-223.
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This is Diodes Inc P-channel MOSFET 6.4 A 40 V 3+Tab-Pin SOT-223 manufactured by DiodesZetex. The manufacturer part number is ZXMP4A16GTA. It has a maximum of 40 v drain source voltage. With a typical gate charge at Vgs includes 26.1 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 3.9 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.8mm. Furthermore, the product is 3.7mm wide. Its accurate length is 6.7mm. Whereas its minimum gate threshold voltage includes 1v. The package is a sort of sot-223. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 6.4 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 100 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
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