Infineon IRF9388PBF P-channel MOSFET, 12 A, 30 V HEXFET, 8-Pin SOIC
Product Information
Category:
Power MOSFET
Dimensions:
5 x 4 x 1.5mm
Maximum Continuous Drain Current:
12 A
Transistor Material:
Si
Width:
4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Drain Source Resistance:
11.9 mΩ
Package Type:
SOIC
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
18 nC @ 4.5 V
Channel Type:
P
Typical Input Capacitance @ Vds:
1680 pF @ -25 V
Length:
5mm
Pin Count:
8
Forward Transconductance:
20S
Typical Turn-Off Delay Time:
80 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.5 W
Series:
HEXFET
Maximum Gate Source Voltage:
-25 V, +25 V
Height:
1.5mm
Typical Turn-On Delay Time:
19 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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Yes. We ship IRF9388PBF Internationally to many countries around the world.
This is P-channel MOSFET 12 A 30 V HEXFET 8-Pin SOIC manufactured by Infineon. The manufacturer part number is IRF9388PBF. It is of power mosfet category . The given dimensions of the product include 5 x 4 x 1.5mm. While 12 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. It provides up to 11.9 mω maximum drain source resistance. The package is a sort of soic. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 18 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 1680 pf @ -25 v . Its accurate length is 5mm. It contains 8 pins. The forward transconductance is 20s . Whereas, its typical turn-off delay time is about 80 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 2.5 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -25 v, +25 v. In addition, the height is 1.5mm. In addition, it has a typical 19 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v .
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