Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
1.58 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
250 mW
Maximum Gate Source Voltage:
-10 V, +10 V
Maximum Gate Threshold Voltage:
1.3V
Height:
1.1mm
Width:
1.5mm
Length:
2.9mm
Maximum Drain Source Resistance:
12.8 Ω
Package Type:
CP
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
150 mA
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
3LN01
Detailed Description:
N-Channel 30V 150mA (Ta) 250mW (Ta) Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:
7pF @ 10V
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4V
Mounting Type:
Surface Mount
Rds On (Max) @ Id, Vgs:
3.7Ohm @ 80mA, 4V
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±10V
Gate Charge (Qg) (Max) @ Vgs:
1.58nC @ 10V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Power Dissipation (Max):
250mW (Ta)
Current - Continuous Drain (Id) @ 25°C:
150mA (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
This is manufactured by ON Semiconductor. The manufacturer part number is 3LN01C-TB-E. It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 1.58 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 250 mw maximum power dissipation. It features a maximum gate source voltage of -10 v, +10 v. The product carries 1.3v of maximum gate threshold voltage. In addition, the height is 1.1mm. Furthermore, the product is 1.5mm wide. Its accurate length is 2.9mm. It provides up to 12.8 ω maximum drain source resistance. The package is a sort of cp. It consists of 1 elements per chip. While 150 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. Base Part Number: 3ln01. It features n-channel 30v 150ma (ta) 250mw (ta) surface mount. The product's input capacitance at maximum includes 7pf @ 10v. The drive voltage (maximum and minimum Rds On) of the product includes 1.5v, 4v. It has a maximum Rds On and voltage of 3.7ohm @ 80ma, 4v. The product has a 30v drain to source voltage. The maximum Vgs rate is ±10v. The maximum gate charge and given voltages include 1.58nc @ 10v. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-236-3, sc-59, sot-23-3. The product carries maximum power dissipation 250mw (ta). The continuous current drain at 25°C is 150ma (ta). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.
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