Category:
Power MOSFET
Dimensions:
3.4 x 3.4 x 1.1mm
Maximum Continuous Drain Current:
20 A
Transistor Material:
Si
Width:
3.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
7.6 mΩ
Package Type:
TSDSON
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
37 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
3000 pF @ 30 V
Length:
3.4mm
Pin Count:
8
Typical Turn-Off Delay Time:
20 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
69 W
Series:
OptiMOS 3
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.1mm
Typical Turn-On Delay Time:
15 ns
Minimum Operating Temperature:
-55 °C
