Category:
Power MOSFET
Dimensions:
2.9 x 1.6 x 1mm
Maximum Continuous Drain Current:
2 A
Transistor Material:
Si
Width:
1.6mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
1V
Package Type:
TSOP
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
5 nC @ 10 V
Channel Type:
P
Typical Input Capacitance @ Vds:
376 pF @ -15 V
Length:
2.9mm
Pin Count:
6
Forward Transconductance:
4.6S
Typical Turn-Off Delay Time:
15.3 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
0.5 W
Series:
OptiMOS P
Maximum Gate Source Voltage:
±20 V
Height:
1mm
Typical Turn-On Delay Time:
5.6 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.1V
Maximum Drain Source Resistance:
130 mΩ
This is Dual P-channel MOSFET 2 A 30 V OptiMOS P 6-Pin TSOP manufactured by Infineon. The manufacturer part number is BSL308PE. It is of power mosfet category . The given dimensions of the product include 2.9 x 1.6 x 1mm. While 2 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.6mm wide. The product offers isolated transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 1v of maximum gate threshold voltage. The package is a sort of tsop. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 5 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 376 pf @ -15 v . Its accurate length is 2.9mm. It contains 6 pins. The forward transconductance is 4.6s . Whereas, its typical turn-off delay time is about 15.3 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 0.5 w maximum power dissipation. The product optimos p, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 1mm. In addition, it has a typical 5.6 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.1v . It provides up to 130 mω maximum drain source resistance.
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