Toshiba Semiconductor and Storage GT50J341,Q
Product Information
Current - Collector (Ic) (Max):
50 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Switching Energy:
-
Vce(on) (Max) @ Vge, Ic:
2.2V @ 15V, 50A
Td (on/off) @ 25°C:
-
Operating Temperature:
175°C (TJ)
Input Type:
Standard
Package / Case:
TO-3P-3, SC-65-3
Voltage - Collector Emitter Breakdown (Max):
600 V
Test Condition:
-
Package:
Tray
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
18 Weeks
IGBT Type:
-
Current - Collector Pulsed (Icm):
100 A
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-3P(N)
Power - Max:
200 W
ECCN:
EAR99
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FAQs
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Yes. Our products in Single IGBTs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Toshiba Semiconductor and Storage GT50J341,Q. You can also check on our website or by contacting our customer support team for further order details on Toshiba Semiconductor and Storage GT50J341,Q.
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Yes. We ship GT50J341,Q Internationally to many countries around the world.
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is GT50J341,Q. The maximum collector current includes 50 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. Features 2.2v @ 15v, 50a. The product has 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-3p-3, sc-65-3. The maximum collector emitter breakdown voltage of the product is 600 v. It is shipped in tray package . Its typical moisture sensitivity level is 1 (unlimited). It has a long 18 weeks standard lead time. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The product is available in through hole configuration. to-3p(n) is the supplier device package value. The maximum power of the product is 200 w. The product is designated with the ear99 code number.
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