ON Semiconductor MMBTH10LT1G
Product Information
Transistor Type:
NPN
Dimensions:
3.04 x 1.4 x 1.01mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
225 mW
Maximum Collector Emitter Saturation Voltage:
0.5 V dc
Maximum Collector Base Voltage:
30 V dc
Maximum Collector Emitter Voltage:
25 V
Maximum Base Emitter Saturation Voltage:
0.95 V dc
Maximum Operating Frequency:
100 MHz
Maximum Emitter Base Voltage:
3 V
Package Type:
SOT-23
Number of Elements per Chip:
1
Maximum DC Collector Current:
4 mA
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
18 Weeks
Base Part Number:
MMBTH10
Detailed Description:
RF Transistor NPN 25V 650MHz 225mW Surface Mount SOT-23-3 (TO-236)
Transistor Type:
NPN
Frequency - Transition:
650MHz
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23-3 (TO-236)
Voltage - Collector Emitter Breakdown (Max):
25V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
225mW
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
60 @ 4mA, 10V
Manufacturer:
ON Semiconductor
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Yes. We ship MMBTH10LT1G Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is MMBTH10LT1G. The transistor is a npn type. The given dimensions of the product include 3.04 x 1.4 x 1.01mm. The product is available in surface mount configuration. Provides up to 225 mw maximum power dissipation. The product has a maximum 0.5 v dc collector emitter saturation voltage . Additionally, it has 30 v dc maximum collector base voltage. Whereas features a 25 v of collector emitter voltage (max). In addition, the product has a maximum 0.95 v dc base emitter saturation voltage . It carries 100 mhz of maximum operating frequency. It features a 3 v of maximum emitter base voltage. The package is a sort of sot-23. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 4 ma. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 18 weeks of manufacturer standard lead time. Base Part Number: mmbth10. It features rf transistor npn 25v 650mhz 225mw surface mount sot-23-3 (to-236). The transition frequency of the product is 650mhz. sot-23-3 (to-236) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 25v. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 225mw. Moreover, the product comes in to-236-3, sc-59, sot-23-3. Furthermore, 60 @ 4ma, 10v is the minimum DC current gain at given voltage. The on semiconductor's product offers user-desired applications.
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