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Transistors - Bipolar (BJT) - RF

Enrgtech offers a wide variety of high-quality transistor bipolar (BJT) rf products at fabulous prices with same-day shipping. 

Bipolar transistors are solid state devices made from three silicon layers and consist of three pins. A bipolar transistor is a device that can be used for the switching or modification of current. The two main types of transistors are known as:

  • Positive negative-positive (PNP)
  • Negative Positive-Negative (NPN)

Key Functions

Switching and amplification are the two functions of bipolar transistors. Because these transistors have a three-layer silicon construction, the transistor is given a signal voltage that allows the discrete components to act as a conductor or an insulator. As this change occurs, the transistors can perform two functions which are switching and amplification electronics. Transistors are available in three options: panel, surface, and through-hole mounting, which comes in either metal packaging or tin cans. There are two more transistors available known as:

  • UJT transistors: These are constructed from a bar of Lightly doped N-type silicon and a heavily doped P-type material attached to one side. UJT transistors have resistance because of the lightly doped silicon bar.
  • Digital Transistors: These transistors are usually made from a semiconductor material, typically silicon, due to which it conducts electricity with less resistance. Additionally, they tend to have at least three terminals for easy connection to an external circuit. 

Construction

Transistor Bipolar BJT is constructed when two junction diodes are connected back-to-back in series form, creating a PN junction that shares a common N or P terminal. It is known that silicon is not a good electricity conductor. However, when this silicon is treated specifically with some chemicals, the electrons and the materials tend to behave differently. This process is known as doping, through which the ability of semiconductors to conduct electricity is improved.


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Broadcom Limited
AT-32033-TR1, Broadcom Limited
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KSC2786RTA, onsemi
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Broadcom Limited
AT-42010, Broadcom Limited
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KSC2786YBU, onsemi
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MMBTH34, onsemi
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Central Semiconductor Corp
CP302-MPSH10-WN, Central Semiconductor Corp
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Broadcom Limited
AT-32032-TR1, Broadcom Limited
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AT-42086-BLKG, Broadcom Limited
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AT-41486-BLKG, Broadcom Limited
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Central Semiconductor Corp
CMPTH10 BK, Central Semiconductor Corp
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BF959RL1G, onsemi
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MSC2295-CT1G, onsemi
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Diodes Incorporated
ZTX325STOA, Diodes Incorporated
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MMBTH10-4LT1, onsemi
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KST5179MTF, onsemi
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BF959G, onsemi
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MPS5179_D75Z, onsemi
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KSC2755OMTF, onsemi
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KSC1393RBU, onsemi
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Diodes Incorporated
FMMT918TA, Diodes Incorporated
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Diodes Incorporated
BFQ31ATC, Diodes Incorporated
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Diodes Incorporated
ZTX325STZ, Diodes Incorporated
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Diodes Incorporated
FMMT5179TA, Diodes Incorporated
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KSC2786RBU, onsemi
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MPSH10RLRPG, onsemi
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TRANSISTOR RF NPN 25V TO-92
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MMBTH10LT1G, ON Semiconductor

TRANS SS VHF MIXER NPN 25V SOT23
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2SC5347AE-TD-E, ON Semiconductor
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NSVF5501SKT3G, ON Semiconductor
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