Toshiba Semiconductor and Storage TRS8V65H,LQ

Toshiba Semiconductor and Storage

Product Information

HTSUS:
8541.10.0080
RoHS Status:
ROHS3 Compliant
Package / Case:
4-VSFN Exposed Pad
Operating Temperature - Junction:
175°C
title:
TRS8V65H,LQ
Speed:
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):
0 ns
Current - Average Rectified (Io):
8A
Voltage - Forward (Vf) (Max) @ If:
1.35 V @ 8 A
Voltage - DC Reverse (Vr) (Max):
650 V
Capacitance @ Vr, F:
520pF @ 1V, 1MHz
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
20 Weeks
Current - Reverse Leakage @ Vr:
90 µA @ 650 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
4-DFN-EP (8x8)
Packaging:
Tape & Reel (TR)
Technology:
SiC (Silicon Carbide) Schottky
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TRS8V65H,LQ. It is assigned with possible HTSUS value of 8541.10.0080. The product is rohs3 compliant. Moreover, the product comes in 4-vsfn exposed pad. The product operate at temperatures ranging from 175°c. It has a robust speed of no recovery time > 500ma (io). It has a trr (reverse recovery time) of 0 ns. It features a 8a of average rectified current. The product has a maximum forward voltage of 1.35 v @ 8 a. While it has maximum reverse voltage of 650 v. Moreover, the product has a 520pf @ 1v, 1mhz capacitance. Its typical moisture sensitivity level is 1 (unlimited). It has a long 20 weeks standard lead time. 90 µa @ 650 v is the reverse leakage value of a bespoke product. The product is available in surface mount configuration. 4-dfn-ep (8x8) is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. This product use sic (silicon carbide) schottky technology. The product is designated with the ear99 code number.

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