Toshiba Semiconductor and Storage TRS12E65H,S1Q

Toshiba Semiconductor and Storage

Product Information

HTSUS:
8541.10.0080
RoHS Status:
ROHS3 Compliant
Package / Case:
TO-220-2
Operating Temperature - Junction:
175°C
title:
TRS12E65H,S1Q
Speed:
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):
0 ns
Current - Average Rectified (Io):
12A
Voltage - Forward (Vf) (Max) @ If:
1.35 V @ 12 A
Voltage - DC Reverse (Vr) (Max):
650 V
Capacitance @ Vr, F:
778pF @ 1V, 1MHz
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
20 Weeks
Current - Reverse Leakage @ Vr:
120 µA @ 650 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220-2L
Packaging:
Tube
Technology:
SiC (Silicon Carbide) Schottky
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TRS12E65H,S1Q. It is assigned with possible HTSUS value of 8541.10.0080. The product is rohs3 compliant. Moreover, the product comes in to-220-2. The product operate at temperatures ranging from 175°c. It has a robust speed of no recovery time > 500ma (io). It has a trr (reverse recovery time) of 0 ns. It features a 12a of average rectified current. The product has a maximum forward voltage of 1.35 v @ 12 a. While it has maximum reverse voltage of 650 v. Moreover, the product has a 778pf @ 1v, 1mhz capacitance. Its typical moisture sensitivity level is 1 (unlimited). It has a long 20 weeks standard lead time. 120 µa @ 650 v is the reverse leakage value of a bespoke product. The product is available in through hole configuration. to-220-2l is the supplier device package value. In addition, tube is the available packaging type of the product. This product use sic (silicon carbide) schottky technology. The product is designated with the ear99 code number.

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