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This is manufactured by NXP Semiconductors. The manufacturer part number is PBSS4260QAZ. The maximum collector current includes 2 a. It is assigned with possible HTSUS value of 8541.21.0075. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 3-xdfn exposed pad. Furthermore, 40 @ 2a, 2v is the minimum DC current gain at given voltage. The transition frequency of the product is 180mhz. The maximum collector emitter breakdown voltage of the product is 60 v. The transistor is a npn type. The 190mv @ 50ma, 1a is the maximum Vce saturation. In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. The product is automotive, a grade of class. dfn1010d-3 is the supplier device package value. In addition, bulk is the available packaging type of the product. The maximum power of the product is 325 mw. The product is designated with the ear99 code number.
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