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Fairchild MJD31CITU NPN Transistor, 3 A, 100 V, 3-Pin TO-251

MJD31CITU Fairchild  NPN Transistor, 3 A, 100 V, 3-Pin TO-251
MJD31CITU
Fairchild Semiconductor

Product Information

Minimum DC Current Gain:
10
Transistor Type:
NPN
Dimensions:
6.8 x 2.5 x 6.3mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
15 W
Maximum Collector Emitter Saturation Voltage:
1.2 V
Maximum Collector Base Voltage:
100 V
Maximum Collector Emitter Voltage:
100 V
Height:
6.3mm
Width:
2.5mm
Length:
6.8mm
Package Type:
TO-251
Number of Elements per Chip:
1
Maximum DC Collector Current:
3 A
Maximum Emitter Base Voltage:
5 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
3 A
HTSUS:
0000.00.0000
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
100 V
Operating Temperature:
150°C (TJ)
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
DC Current Gain (hFE) (Min) @ Ic, Vce:
10 @ 3A, 4V
Frequency - Transition:
3MHz
Vce Saturation (Max) @ Ib, Ic:
1.2V @ 375mA, 3A
REACH Status:
REACH Affected
Transistor Type:
NPN
Package:
Bulk
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
50µA
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
I-PAK
Power - Max:
1.56 W
Base Product Number:
MJD31
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is Fairchild NPN Transistor 3 A 100 V 3-Pin TO-251 manufactured by Fairchild Semiconductor. The manufacturer part number is MJD31CITU. It features up to 10 of minimum DC current gain. The transistor is a npn type. The given dimensions of the product include 6.8 x 2.5 x 6.3mm. The product is available in through hole configuration. Provides up to 15 w maximum power dissipation. The product has a maximum 1.2 v collector emitter saturation voltage . Additionally, it has 100 v maximum collector base voltage. Whereas features a 100 v of collector emitter voltage (max). In addition, the height is 6.3mm. Furthermore, the product is 2.5mm wide. Its accurate length is 6.8mm. The package is a sort of to-251. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 3 a. It features a 5 v of maximum emitter base voltage. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 3 a. It is assigned with possible HTSUS value of 0000.00.0000. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 100 v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-251-3 short leads, ipak, to-251aa. Furthermore, 10 @ 3a, 4v is the minimum DC current gain at given voltage. The transition frequency of the product is 3mhz. The 1.2v @ 375ma, 3a is the maximum Vce saturation. In addition, it is reach affected. It is shipped in bulk package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 50µa is the maximum current at collector cutoff. i-pak is the supplier device package value. The maximum power of the product is 1.56 w. Moreover, it corresponds to mjd31, a base product number of the product. The product is designated with the ear99 code number.

pdf icon
MJD31C, NPN Epitaxial Silicon Transistor Data Sheet(Technical Reference)

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FAQs

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Yes. We ship MJD31CITU Internationally to many countries around the world.