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This is manufactured by ON Semiconductor. The manufacturer part number is NFAM2012L5BT. The product is available in through hole configuration. Whereas features a 1200 v of collector emitter voltage (max). It has 6 transistors . The product is available in [Cannel Type] channel. The product has a maximum 20 a continuous collector current . It offers a maximum 15v gate emitter voltage . The package is a sort of dip39. The product is available in 3 phase bridge configuration. It has typical 26 weeks of manufacturer standard lead time. In addition, tube is the available packaging type of the product. It features power driver module igbt 3 phase 1.2kv 20a 39-powerdip module (1.413", 35.90mm), 30 leads. Base Part Number: nfam2012. 2500vrms of isolation voltage. Features a 20a current in A. It carries a 1.2kv of voltage. Moreover, the product comes in 39-powerdip module (1.413", 35.90mm), 30 leads. The product is available in 3 phase configuration. It comes in igbt configuration. The on semiconductor's product offers user-desired applications.
For more information please check the datasheets.
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