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ON Semiconductor AFGHL50T65SQD IGBT, 80 A 650 V, 3-Pin TO-247

AFGHL50T65SQD ON Semiconductor  IGBT, 80 A 650 V, 3-Pin TO-247
AFGHL50T65SQD
onsemi

Product Information

Maximum Power Dissipation:
268 W
Maximum Collector Emitter Voltage:
650 V
Number of Transistors:
30
Channel Type:
N
Maximum Continuous Collector Current:
80 A
Maximum Gate Emitter Voltage:
±30.0V
Package Type:
TO-247
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
80 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Switching Energy:
950µJ (on), 460µJ (off)
Vce(on) (Max) @ Vge, Ic:
2.1V @ 15V, 50A
Voltage - Collector Emitter Breakdown (Max):
650 V
Td (on/off) @ 25°C:
20ns/81ns
Operating Temperature:
-55°C ~ 175°C (TJ)
Input Type:
Standard
Package / Case:
TO-247-3
Gate Charge:
102 nC
REACH Status:
REACH Unaffected
edacadModel:
AFGHL50T65SQD Models
edacadModelUrl:
/en/models/12181300
Test Condition:
400V, 50A, 4.7Ohm, 15V
Package:
Tube
Moisture Sensitivity Level (MSL):
Not Applicable
Qualification:
AEC-Q101
standardLeadTime:
11 Weeks
IGBT Type:
Trench Field Stop
Current - Collector Pulsed (Icm):
200 A
Mounting Type:
Through Hole
Grade:
Automotive
Series:
-
Supplier Device Package:
TO-247-3
Power - Max:
268 W
Base Product Number:
AFGHL50
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is ON Semiconductor IGBT 80 A 650 V 3-Pin TO-247 manufactured by onsemi. The manufacturer part number is AFGHL50T65SQD. Provides up to 268 w maximum power dissipation. Whereas features a 650 v of collector emitter voltage (max). It has 30 transistors . The product is available in [Cannel Type] channel. The product has a maximum 80 a continuous collector current . It offers a maximum ±30.0v gate emitter voltage . The package is a sort of to-247. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 80 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. Provide switching energy up to 950µj (on), 460µj (off). Features 2.1v @ 15v, 50a. The maximum collector emitter breakdown voltage of the product is 650 v. Td (on/off) value of 20ns/81ns. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-247-3. Features 102 nc gate charge. In addition, it is reach unaffected. Test condition included 400v, 50a, 4.7ohm, 15v. It is shipped in tube package . Its typical moisture sensitivity level is not applicable. It has a long 11 weeks standard lead time. Features an IGBT trench field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The product is available in through hole configuration. The product is automotive, a grade of class. to-247-3 is the supplier device package value. The maximum power of the product is 268 w. Moreover, it corresponds to afghl50, a base product number of the product. The product is designated with the ear99 code number.

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Datasheet - AFGHL50T65SQD(Technical Reference)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)
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Wafer Fab 09/May/2023(PCN Assembly/Origin)
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AFGHL50T65SQD(Datasheets)
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Packing quantity increase 25/Jun/2021(PCN Packaging)

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FAQs

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You will get a confirmation email regarding your order of ON Semiconductor AFGHL50T65SQD IGBT, 80 A 650 V, 3-Pin TO-247. You can also check on our website or by contacting our customer support team for further order details on ON Semiconductor AFGHL50T65SQD IGBT, 80 A 650 V, 3-Pin TO-247.
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