Fairchild Semiconductor, FJBE2150DTU, Emmitter Switched, NPN Silicon Transistor 2 A 2.21V, 3-Pin D2PAK
Product Information
Category:
Silicon Transistor
Maximum Base Source Voltage:
±20V
Minimum DC Current Gain:
20
Transistor Type:
NPN
Dimensions:
10.67 x 9.85 x 4.83mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
110 W
Maximum Gate Source Voltage:
±20 V
Height:
4.83mm
Maximum Collector Source Voltage:
2.21V
Width:
9.85mm
Length:
10.67mm
Package Type:
D2PAK
Minimum Operating Temperature:
-55 °C
Maximum DC Collector Current:
2 A
Maximum Base Current:
1A
Maximum Operating Temperature:
+125 °C
Pin Count:
3
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Yes. Our products in Emitter-Switched Bipolar Transistors category are shipped in lowest possible time.
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Yes. We ship FJBE2150DTU Internationally to many countries around the world.
This is Emmitter Switched NPN Silicon Transistor 2 A 2.21V 3-Pin D2PAK manufactured by Fairchild Semiconductor. The manufacturer part number is FJBE2150DTU. It is of silicon transistor category . it is designed with a Maximum Base Source Voltage of ±20v It features up to 20 of minimum DC current gain. The transistor is a npn type. The given dimensions of the product include 10.67 x 9.85 x 4.83mm. The product is available in surface mount configuration. Provides up to 110 w maximum power dissipation. It features a maximum gate source voltage of ±20 v. In addition, the height is 4.83mm. It has a Maximum Collector Source Voltage of 2.21v Furthermore, the product is 9.85mm wide. Its accurate length is 10.67mm. The package is a sort of d2pak. Whereas, the minimum operating temperature of the product is -55 °c. Moreover, it has a maximum DC collector current of 2 a. It has a Maximum Base Current of 1a It has a maximum operating temperature of +125 °c. It contains 3 pins.
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