Toshiba Semiconductor and Storage TRS12E65F,S1Q(S
Product Information
Detailed Description:
Diode Silicon Carbide Schottky 650V 12A (DC) Through Hole TO-220-2L
Current - Reverse Leakage @ Vr:
90µA @ 650V
Operating Temperature - Junction:
175°C (Max)
Mounting Type:
Through Hole
Voltage - DC Reverse (Vr) (Max):
650V
Capacitance @ Vr, F:
65pF @ 650V, 1MHz
Voltage - Forward (Vf) (Max) @ If:
1.7V @ 12A
Supplier Device Package:
TO-220-2L
Reverse Recovery Time (trr):
0ns
Current - Average Rectified (Io):
12A (DC)
Package / Case:
TO-220-2
Diode Type:
Silicon Carbide Schottky
Speed:
No Recovery Time > 500mA (Io)
Manufacturer:
Toshiba Semiconductor and Storage
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Yes. Our products in Diodes - Rectifiers - Single category are shipped in lowest possible time.
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TRS12E65F,S1Q(S. It features diode silicon carbide schottky 650v 12a (dc) through hole to-220-2l. 90µa @ 650v is the reverse leakage value of a bespoke product. The product operate at temperatures ranging from 175°c (max). The product is available in through hole configuration. While it has maximum reverse voltage of 650v. Moreover, the product has a 65pf @ 650v, 1mhz capacitance. The product has a maximum forward voltage of 1.7v @ 12a. to-220-2l is the supplier device package value. It has a trr (reverse recovery time) of 0ns. It features a 12a (dc) of average rectified current. Moreover, the product comes in to-220-2. It is designed with a silicon carbide schottky diode. It has a robust speed of no recovery time > 500ma (io). The toshiba semiconductor and storage's product offers user-desired applications.
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