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United Kingdom
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TRS10E65F,S1Q(S. It features diode silicon carbide schottky 650v 10a (dc) through hole to-220-2l. 50µa @ 650v is the reverse leakage value of a bespoke product. The product operate at temperatures ranging from 175°c (max). The product is available in through hole configuration. While it has maximum reverse voltage of 650v. Moreover, the product has a 36pf @ 650v, 1mhz capacitance. The product has a maximum forward voltage of 1.6v @ 10a. to-220-2l is the supplier device package value. It has a trr (reverse recovery time) of 0ns. It features a 10a (dc) of average rectified current. Moreover, the product comes in to-220-2. It is designed with a silicon carbide schottky diode. It has a robust speed of no recovery time > 500ma (io). The toshiba semiconductor and storage's product offers user-desired applications.
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