Mounting Type:
Surface Mount
Maximum Continuous Forward Current:
12.5A
Peak Non-Repetitive Forward Surge Current:
700A
Diode Technology:
Schottky
Package Type:
PQFN
Number of Elements per Chip:
1
Diode Type:
Schottky
Diode Configuration:
Single
Pin Count:
3
Peak Reverse Repetitive Voltage:
650V
Base Part Number:
FFSM1265
Detailed Description:
Diode Silicon Carbide Schottky 650V 12.5A (DC) Surface Mount 4-PQFN (8x8)
Reverse Recovery Time (trr):
0ns
Current - Reverse Leakage @ Vr:
200µA @ 650V
Operating Temperature - Junction:
-55°C ~ 175°C
Mounting Type:
Surface Mount
Voltage - DC Reverse (Vr) (Max):
650V
Capacitance @ Vr, F:
665pF @ 1V, 100kHz
Voltage - Forward (Vf) (Max) @ If:
1.75V @ 12A
Supplier Device Package:
4-PQFN (8x8)
Packaging:
Cut Tape (CT)
Customer Reference:
Current - Average Rectified (Io):
12.5A (DC)
Package / Case:
4-PowerTSFN
Diode Type:
Silicon Carbide Schottky
Speed:
No Recovery Time > 500mA (Io)
Manufacturer:
ON Semiconductor
This is manufactured by ON Semiconductor. The manufacturer part number is FFSM1265A. The product is available in surface mount configuration. Furthermore, its maximum continuous forward current constitutes 12.5a. Moreover, a bespoke product has 700a peak non-repetitive forward surge current. The product utilizes schottky diode technology. The package is a sort of pqfn. It consists of 1 elements per chip. It is designed with a schottky diode. The diode features a single configuration. It contains 3 pins. While having the peak reverse repetitive 650v. Base Part Number: ffsm1265. It features diode silicon carbide schottky 650v 12.5a (dc) surface mount 4-pqfn (8x8). It has a trr (reverse recovery time) of 0ns. 200µa @ 650v is the reverse leakage value of a bespoke product. The product operate at temperatures ranging from -55°c ~ 175°c. While it has maximum reverse voltage of 650v. Moreover, the product has a 665pf @ 1v, 100khz capacitance. The product has a maximum forward voltage of 1.75v @ 12a. 4-pqfn (8x8) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. It features a 12.5a (dc) of average rectified current. Moreover, the product comes in 4-powertsfn. It is designed with a silicon carbide schottky diode. It has a robust speed of no recovery time > 500ma (io). The on semiconductor's product offers user-desired applications.
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