Diameter:
1.91mm
Mounting Type:
Through Hole
Peak Reverse Recovery Time:
50ns
Peak Non-Repetitive Forward Surge Current:
4A
Maximum Forward Voltage Drop:
1V
Maximum Continuous Forward Current:
500mA
Diode Technology:
Silicon Junction
Package Type:
DO-35
Number of Elements per Chip:
1
Diode Type:
Silicon Junction
Diode Configuration:
Single
Pin Count:
2
Peak Reverse Repetitive Voltage:
200V
Manufacturer Standard Lead Time:
32 Weeks
Base Part Number:
1N3070
Detailed Description:
Diode Standard 200V 500mA Through Hole DO-35
Reverse Recovery Time (trr):
50ns
Current - Reverse Leakage @ Vr:
100nA @ 175V
Operating Temperature - Junction:
175°C (Max)
Mounting Type:
Through Hole
Voltage - DC Reverse (Vr) (Max):
200V
Capacitance @ Vr, F:
5pF @ 0V, 1MHz
Voltage - Forward (Vf) (Max) @ If:
1V @ 100mA
Supplier Device Package:
DO-35
Packaging:
Cut Tape (CT)
Customer Reference:
Current - Average Rectified (Io):
500mA
Package / Case:
DO-204AH, DO-35, Axial
Diode Type:
Standard
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Manufacturer:
ON Semiconductor
