Mounting Type:
Surface Mount
Maximum Continuous Forward Current:
500mA
Peak Non-Repetitive Forward Surge Current:
5.5A
Diode Technology:
Schottky
Package Type:
SOD-123
Number of Elements per Chip:
1
Diode Type:
Schottky
Diode Configuration:
Single
Pin Count:
2
Peak Reverse Repetitive Voltage:
30V
Manufacturer Standard Lead Time:
20 Weeks
Base Part Number:
MBR0530
Detailed Description:
Diode Schottky 30V 500mA Surface Mount SOD-123
Current - Reverse Leakage @ Vr:
130µA @ 30V
Operating Temperature - Junction:
-65°C ~ 125°C
Mounting Type:
Surface Mount
Voltage - DC Reverse (Vr) (Max):
30V
Voltage - Forward (Vf) (Max) @ If:
430mV @ 500mA
Supplier Device Package:
SOD-123
Packaging:
Cut Tape (CT)
Customer Reference:
Current - Average Rectified (Io):
500mA
Package / Case:
SOD-123
Diode Type:
Schottky
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Manufacturer:
ON Semiconductor
This is manufactured by ON Semiconductor. The manufacturer part number is MBR0530T1G. The product is available in surface mount configuration. Furthermore, its maximum continuous forward current constitutes 500ma. Moreover, a bespoke product has 5.5a peak non-repetitive forward surge current. The product utilizes schottky diode technology. The package is a sort of sod-123. It consists of 1 elements per chip. It is designed with a schottky diode. The diode features a single configuration. It contains 2 pins. While having the peak reverse repetitive 30v. It has typical 20 weeks of manufacturer standard lead time. Base Part Number: mbr0530. It features diode schottky 30v 500ma surface mount sod-123. 130µa @ 30v is the reverse leakage value of a bespoke product. The product operate at temperatures ranging from -65°c ~ 125°c. While it has maximum reverse voltage of 30v. The product has a maximum forward voltage of 430mv @ 500ma. sod-123 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. It features a 500ma of average rectified current. Moreover, the product comes in sod-123. It has a robust speed of fast recovery =< 500ns, > 200ma (io). The on semiconductor's product offers user-desired applications.
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