Vishay General Semiconductor - Diodes Division VFT10200C-E3/4W
Product Information
The Vishay General Semiconductor - Diodes Division VFT10200C-E3/4W is an Ultrafast Rectifier Diode with a high reverse voltage 200V. It is ideal for high-frequency and switch-mode power supply applications due to its ultrafast recovery and high voltage capability.
HTSUS:
8541.10.0080
RoHS Status:
ROHS3 Compliant
Package / Case:
TO-220-3 Full Pack, Isolated Tab
Diode Configuration:
1 Pair Common Cathode
Operating Temperature - Junction:
-40°C ~ 150°C
REACH Status:
REACH Unaffected
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If:
1.6 V @ 5 A
Package:
Tube
Voltage - DC Reverse (Vr) (Max):
200 V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Average Rectified (Io) (per Diode):
5A
standardLeadTime:
10 Weeks
Current - Reverse Leakage @ Vr:
150 µA @ 200 V
Mounting Type:
Through Hole
Series:
TMBS®
Supplier Device Package:
ITO-220AB
Technology:
Schottky
Base Product Number:
VFT10200
ECCN:
EAR99
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FAQs
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The Vishay General Semiconductor - Diodes Division VFT10200C-E3/4W is a powerful diode designed for various electronic applications. With its Schottky diode technology, it offers excellent performance and efficiency. With its specifications and features, this diode proves to be a reliable component in many electrical circuits. Its Schottky diode technology and ITO220AB package provide reliability and versatility in various electronic applications.
The VFT10200C-E3/4W diode can handle a high current of 10A, making it suitable for applications that require heavy current flow. Additionally, it has a high voltage rating of 200V, which allows it to withstand high voltage levels without compromising its functionality. These attributes make the diode ideal for power electronics and industrial applications.
The VFT10200C-E3/4W diode comes in an ITO220AB package. This package offers several advantages, including high power dissipation and low thermal resistance. The ITO220AB package also enables easy installation on printed circuit boards (PCBs) due to its industry-standard footprint, making it convenient for manufacturers and engineers.
This diode employs Schottky technology, which provides numerous benefits. Schottky diodes feature a lower forward voltage drop than standard PN junction diodes, reducing power losses and improving efficiency. The VFT10200C-E3/4W diode's Schottky construction allows for fast switching characteristics, making it suitable for high-frequency applications.
The Vishay General Semiconductor - Diodes Division VFT10200C-E3/4W: Application Potential
The VFT10200C-E3/4W diode finds applications in various electronic circuits. It can be utilised in power supplies, voltage regulators, rectifiers, and inverters. The diode's high current and voltage ratings suit industrial and automotive applications. Its Schottky technology ensures optimal performance in high-frequency switching circuits and energy-efficient systems.
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