ON Semi BC856BDW1T3G Dual PNP Transistor, 100 mA, 65 V, 6-Pin SOT-363

ON Semiconductor

Product Information

Transistor Type:
PNP
Dimensions:
2.0 x 1.25 x 0.95mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
380 mW
Maximum Collector Emitter Saturation Voltage:
-0.65 V
Maximum Collector Base Voltage:
-80 V
Maximum Collector Emitter Voltage:
65 V
Maximum Operating Frequency:
100 MHz
Maximum Emitter Base Voltage:
-5 V
Package Type:
SOT-363 (SC-88)
Number of Elements per Chip:
2
Maximum DC Collector Current:
100 mA
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Isolated
RoHs Compliant
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This is ON Semi Dual PNP Transistor 100 mA 65 V 6-Pin SOT-363 manufactured by ON Semiconductor. The manufacturer part number is BC856BDW1T3G. The transistor is a pnp type. The given dimensions of the product include 2.0 x 1.25 x 0.95mm. The product is available in surface mount configuration. Provides up to 380 mw maximum power dissipation. The product has a maximum -0.65 v collector emitter saturation voltage . Additionally, it has -80 v maximum collector base voltage. Whereas features a 65 v of collector emitter voltage (max). It carries 100 mhz of maximum operating frequency. It features a -5 v of maximum emitter base voltage. The package is a sort of sot-363 (sc-88). It consists of 2 elements per chip. Moreover, it has a maximum DC collector current of 100 ma. It has a maximum operating temperature of +150 °c. It contains 6 pins. The product offers isolated transistor configuration.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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