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Gate Drivers | Half And Full Bridge Gate Driver

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IR2010SPBF, Infineon

MOSFET & IGBT Gate Drivers, High and Low Side, Infineon Gate Driver ICs from Infineon to control MOSFET or IGBT power devices in high-side and low-side configurations. MOSFET & IGBT Drivers, Infineon (International Rectifier)

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RE46C318S8F, Microchip

Piezoelectric Drivers, Microchip Piezoelectric and Haptic Drivers

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PVG612APBF, International Rectifier

Transistor Output - FET & MOSFET, Infineon The PDV13 series from Infineon is a single pole, normally open, solid-state replacement for electromechanical relays used for general purpose switching of analogue signals. It utilises Infineon HEXFET power MOSFET as the output switch, driven by an integrated circuit photovoltaic generator of novel construction. Bounce-Free Operation 1010 Off-State Resistance 1,000 V/μsec dv/dt 5 mA Input Sensitivity 4,000 VRMS I/O Isolation Solid-State Reliability

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2ED2182S06FXUMA1, Infineon

The Infineon 2ED2182S06F is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It is based on SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational logic at negative voltages of up to - 11 Von VS pin on transient voltage. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Floating channel designed for bootstrap operation Operating voltages (VS node) upto + 650 V Maximum bootstrap voltage (VB node) of + 675 V Integrated ultra-fast, low resistance bootstrap diode

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2ED2183S06FXUMA1, Infineon

The Infineon 2ED2183S06F is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It is based on SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational logic at negative voltages of up to - 11 Von VS pin on transient voltage. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Floating channel designed for bootstrap operation Operating voltages (VS node) upto + 650 V Maximum bootstrap voltage (VB node) of + 675 V Integrated ultra-fast, low resistance bootstrap diode

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New items

2EDL05I06PFXUMA1, Infineon

The Infineon 2EDL05 is a 600-V half-bridge gate driver family. It is thin-film-SOI technology provides excellent ruggedness and noise immunity. The Schmitt trigger logic inputs are compatible with standard CMOS or LSTTL logic down to 3.3 V. The output drives features a high pulse current buffer stage designed for minimum driver cross-conduction. Fully operational to +600 V Floating channel designed for bootstrap operation Output source/sink current capability +0.36 A/-0.7 A

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6EDL04N02PRXUMA1, Infineon

The Infineon 6ED family is a full bridge driver to control power device like MOS-transistors or IGBTs in 3-phase system with a maximum blocking voltage of +600 V.It based on the used SOI-technology there is an excellent ruggedness on transient voltages. No parasitic Thyristor structure are present in the device. Hence, no parasitic latch-up may occur at all temperature and voltage conditions. It has signal interlocking of every phase to prevent cross conduction. Maximum blocking voltage +600 V Output source/sink current +0.165 A/-0.375 A Integrated ultra-fast, low RDS(ON) bootstrap diode Insensitivity of the bridge output to negative

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New items

1ED44173N01BXTSA1, Infineon

The Infineon single-channel low-side MOSFET gate driver IC is a low-voltage, power MOSFET non-inverting gate driver. Proprietary latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output. The output driver features a current buffer stage. The single-channel low-side MOSFET gate driver IC has OCP pin for over current protection sense and a FAULT status output. The EN/FLT needs to be outside pulled up to provide normal operation, pulling EN/FLT low disable the driver. Internal circuitry on VCC pin provides an under voltage lockout protection that holds output low until VCC supply voltage is within operating range. Single pin for fault output and enable Programmable fault clear time Under voltage lockout for MOSFETs CMOS Schmitt-triggered inputs Output in phase with input

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2ED21064S06JXUMA1, Infineon

The Infineon high-side and low-side gate driver is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Based on Infineons SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational logic at negative voltages of up to - 11 Von VS pin on transient voltages. There are not any parasitic thyristor structures present in the device, hence no parasitic latch up may occur at all temperature and voltage conditions. Negative voltage tolerance on inputs of –5 V Independent under voltage lockout for both channels Schmitt trigger inputs with hysteresis Dual package options of DSO-8 and DSO-14 High and low voltage pins separated for maximum creep age and clearance Separate logic and power ground with the 2ED21064S06J version RoHS compliant

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2ED21094S06JXUMA1, Infineon

The Infineon half bridge gate driver is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Based on Infineons SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational logic at negative voltages of up to - 11 V on VS pin on transient voltages. There are not any parasitic thyristor structures present in the device, hence no parasitic latch up may occur at all temperature and voltage conditions. Maximum supply voltage of 25 V Dual package options of DSO-8 and DSO-14 High and low voltage pins separated for maximum creep age and clearance Separate logic and power ground with the 2ED21094S06J version Shutdown input turns off both channels

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1EDN7116UXTSA1, Infineon

The Infineon Gate Drivers is a single-channel gate-driver which is IC optimized and having a high-performance system design with fast-switching transistors, including truly differential input. The gate driver output state is exclusively controlled by the voltage difference between the two inputs, independent of the drivers reference potential as long as the common-mode voltage. High common-mode input voltage range High immunity to common-mode slew rate Active bootstrap clamping

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New items

1EDN7136UXTSA1, Infineon

The Infineon Gate Drivers is a single-channel gate-driver which is IC optimized and having a high-performance system design with fast-switching transistors, including truly differential input. The gate driver output state is exclusively controlled by the voltage difference between the two inputs, independent of the drivers reference potential as long as the common-mode voltage. High common-mode input voltage range High immunity to common-mode slew rate Active bootstrap clamping

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