Infineon BC847PNH6327XTSA1 Dual NPN + PNP Transistor, 100 mA, 50 V, 6-Pin SOT-363
Product Information
Dimensions:
2 x 1.25 x 0.8mm
Maximum Collector Emitter Saturation Voltage:
650 mV
Width:
1.25mm
Transistor Configuration:
Isolated
Maximum Operating Frequency:
250 MHz
Package Type:
SOT-363 (SC-88)
Number of Elements per Chip:
2
Maximum Operating Temperature:
+150 °C
Transistor Type:
NPN + PNP
Maximum Collector Base Voltage:
50 V
Maximum Base Emitter Saturation Voltage:
900 mV
Maximum Emitter Base Voltage:
6 V
Length:
2mm
Maximum DC Collector Current:
100 mA
Pin Count:
6
Minimum DC Current Gain:
200
Mounting Type:
Surface Mount
Maximum Power Dissipation:
250 mW
Maximum Collector Emitter Voltage:
50 V
Height:
0.8mm
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This is Dual NPN + PNP Transistor 100 mA 50 V 6-Pin SOT-363 manufactured by Infineon. The manufacturer part number is BC847PNH6327XTSA1. The given dimensions of the product include 2 x 1.25 x 0.8mm. The product has a maximum 650 mv collector emitter saturation voltage . Furthermore, the product is 1.25mm wide. The product offers isolated transistor configuration. It carries 250 mhz of maximum operating frequency. The package is a sort of sot-363 (sc-88). It consists of 2 elements per chip. It has a maximum operating temperature of +150 °c. The transistor is a npn + pnp type. Additionally, it has 50 v maximum collector base voltage. In addition, the product has a maximum 900 mv base emitter saturation voltage . It features a 6 v of maximum emitter base voltage. Its accurate length is 2mm. Moreover, it has a maximum DC collector current of 100 ma. It contains 6 pins. It features up to 200 of minimum DC current gain. The product is available in surface mount configuration. Provides up to 250 mw maximum power dissipation. Whereas features a 50 v of collector emitter voltage (max). In addition, the height is 0.8mm.
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