Taiwan Semi BA159 R0 Fast Recovery Diode, 1000V 1A, 2-Pin DO-41
Product Information
Diameter:
2.7mm
Dimensions:
2.7 (Dia.) x 5.2mm
Mounting Type:
Through Hole
Diode Technology:
Silicon Junction
Maximum Continuous Forward Current:
1A
Peak Reverse Recovery Time:
250ns
Peak Non-Repetitive Forward Surge Current:
30A
Maximum Forward Voltage Drop:
1.2V
Peak Reverse Current:
150µA
Rectifier Type:
Fast Recovery
Length:
5.2mm
Package Type:
DO-41
Number of Elements per Chip:
1
Minimum Operating Temperature:
-65 °C
Diode Type:
Silicon Junction
Maximum Operating Temperature:
+150 °C
Diode Configuration:
Single
Pin Count:
2
Peak Reverse Repetitive Voltage:
1000V
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Yes. Our products in Rectifier Diodes & Schottky Diodes category are shipped in lowest possible time.
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Yes. We ship BA159 R0 Internationally to many countries around the world.
This is Taiwan Semi Fast Recovery Diode 1000V 1A 2-Pin DO-41 manufactured by Taiwan Semiconductor. The manufacturer part number is BA159 R0. Its diameter is 2.7mm. The given dimensions of the product include 2.7 (dia.) x 5.2mm. The product is available in through hole configuration. The product utilizes silicon junction diode technology. Furthermore, its maximum continuous forward current constitutes 1a. Moreover, it has a peak reverse recovery time about 250ns . Moreover, a bespoke product has 30a peak non-repetitive forward surge current. It features 1.2v of maximum forward voltage drop. It has a typical 150µa peak reverse current . This fast recovery product is highly suited for various professionals in various settings. Its accurate length is 5.2mm. The package is a sort of do-41. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -65 °c. It is designed with a silicon junction diode. It has a maximum operating temperature of +150 °c. The diode features a single configuration. It contains 2 pins. While having the peak reverse repetitive 1000v.
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