Category:
Power MOSFET
Dimensions:
6.73 x 6.22 x 2.41mm
Maximum Continuous Drain Current:
800 mA
Transistor Material:
Si
Width:
6.22mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
650 V
Maximum Gate Threshold Voltage:
3.9V
Package Type:
IPAK (TO-251)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
3.9 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
100 pF @ 25 V
Length:
6.73mm
Pin Count:
3
Typical Turn-Off Delay Time:
55 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
11 W
Series:
CoolMOS C3
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
2.41mm
Typical Turn-On Delay Time:
30 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
6 Ω
