Category:
Power MOSFET
Dimensions:
10.31 x 4.57 x 9.45mm
Maximum Continuous Drain Current:
31 A
Transistor Material:
Si
Width:
4.57mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
650 V
Maximum Drain Source Resistance:
110 mΩ
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
118 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
3240 pF @ 100 V
Length:
10.31mm
Pin Count:
3
Typical Turn-Off Delay Time:
68 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
277.8 W
Series:
CoolMOS CFD
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
9.45mm
Typical Turn-On Delay Time:
16 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
0.9V
