Infineon IDH10G65C5XKSA1 Schottky Diode, 650V 10A, 2-Pin TO-220

IDH10G65C5XKSA1 Infineon  Schottky Diode, 650V 10A, 2-Pin TO-220
IDH10G65C5XKSA1
IDH10G65C5XKSA1
ET16792904
ET16792904
Unclassified
Infineon

Product Information

Dimensions:
10.2 x 4.5 x 15.95mm
Mounting Type:
Through Hole
Diode Technology:
Schottky
Maximum Continuous Forward Current:
10A
Maximum Operating Temperature:
+175 °C
Peak Non-Repetitive Forward Surge Current:
82A
Maximum Forward Voltage Drop:
2.1V
Height:
15.95mm
Peak Reverse Current:
1.25mA
Width:
4.5mm
Length:
10.2mm
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Diode Type:
Schottky
Power Dissipation:
89W
Diode Configuration:
Single
Pin Count:
2
Peak Reverse Repetitive Voltage:
650V
RoHs Compliant
Checking for live stock

This is Schottky Diode 650V 10A 2-Pin TO-220 manufactured by Infineon. The manufacturer part number is IDH10G65C5XKSA1. The given dimensions of the product include 10.2 x 4.5 x 15.95mm. The product is available in through hole configuration. The product utilizes schottky diode technology. Furthermore, its maximum continuous forward current constitutes 10a. It has a maximum operating temperature of +175 °c. Moreover, a bespoke product has 82a peak non-repetitive forward surge current. It features 2.1v of maximum forward voltage drop. In addition, the height is 15.95mm. It has a typical 1.25ma peak reverse current . Furthermore, the product is 4.5mm wide. Its accurate length is 10.2mm. The package is a sort of to-220. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. It is designed with a schottky diode. It has about 89w power dissipation . The diode features a single configuration. It contains 2 pins. While having the peak reverse repetitive 650v.

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SiC 5th Generation thinQ 650V SiC Schottky Diode(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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