Category:
Power MOSFET
Dimensions:
10.31 x 9.45 x 4.57mm
Maximum Continuous Drain Current:
21 A
Transistor Material:
Si
Width:
9.45mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
200 V
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
130 mΩ
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.1V
Maximum Operating Temperature:
+150 °C
Channel Type:
N
Typical Input Capacitance @ Vds:
1400 pF @ 25 V
Length:
10.31mm
Pin Count:
3
Typical Turn-Off Delay Time:
250 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
125 W
Series:
SIPMOS
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
4.57mm
Typical Turn-On Delay Time:
30 ns
Minimum Operating Temperature:
-55 °C
