Category:
Power MOSFET
Dimensions:
6.1 x 5.49 x 1.1mm
Maximum Continuous Drain Current:
93 A
Transistor Material:
Si
Width:
5.49mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2V
Maximum Drain Source Resistance:
5.4 mΩ
Package Type:
TDSON
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
20 nC @ 4.5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
3200 pF @ 15 V
Length:
6.1mm
Pin Count:
8
Typical Turn-Off Delay Time:
19 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
57 W
Series:
OptiMOS 3
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.1mm
Typical Turn-On Delay Time:
16 ns
Minimum Operating Temperature:
-55 °C
