Category:
Power MOSFET
Dimensions:
10.36 x 4.57 x 9.45mm
Maximum Continuous Drain Current:
21 A
Transistor Material:
Si
Width:
4.57mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
650 V
Maximum Gate Threshold Voltage:
5V
Maximum Drain Source Resistance:
220 mΩ
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
95 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
2400 pF @ 25 V
Length:
10.36mm
Pin Count:
3
Typical Turn-Off Delay Time:
59 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
208 W
Series:
CoolMOS CFD
Maximum Gate Source Voltage:
±20 V
Height:
9.45mm
Typical Turn-On Delay Time:
12 ns
Minimum Operating Temperature:
-55 °C
