Category:
Power MOSFET
Dimensions:
10.312 x 9.45 x 4.572mm
Maximum Continuous Drain Current:
8.8 A
Transistor Material:
Si
Width:
9.45mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TO-263
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.1V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
10 nC @ 10 V
Channel Type:
P
Typical Input Capacitance @ Vds:
335 pF @ -25 V
Length:
10.31mm
Pin Count:
3
Forward Transconductance:
4.8S
Typical Turn-Off Delay Time:
48 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
42 W
Series:
SIPMOS
Maximum Gate Source Voltage:
±20 V
Height:
4.572mm
Typical Turn-On Delay Time:
16 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.55V
Maximum Drain Source Resistance:
300 mΩ
