Category:
Power MOSFET
Dimensions:
5 x 4 x 1.5mm
Maximum Continuous Drain Current:
9.1 A, 11 A
Transistor Material:
Si
Width:
4mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.35V
Package Type:
SOIC
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1.35V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
6.7 nC @ 4.5 V, 14 nC @ 4.5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
850 pF@ 15 V, 1790 pF@ 15 V
Length:
5mm
Pin Count:
8
Typical Turn-Off Delay Time:
8 ns, 13 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2 W
Series:
HEXFET
Maximum Gate Source Voltage:
±20 V
Height:
1.5mm
Typical Turn-On Delay Time:
6 (Q1) ns, 8 (Q2) ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
13.7 mΩ, 20.5 mΩ
