Category:
Power MOSFET
Dimensions:
5 x 4 x 1.5mm
Maximum Continuous Drain Current:
1.9 A
Transistor Material:
Si
Width:
4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
150 V
Package Type:
SOIC
Number of Elements per Chip:
1
Maximum Operating Temperature:
150 °C
Typical Gate Charge @ Vgs:
10 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
330 pF @ 25 V
Length:
5mm
Pin Count:
8
Forward Transconductance:
0.75S
Typical Turn-Off Delay Time:
10 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.5 W
Series:
HEXFET
Maximum Gate Source Voltage:
±30 V
Height:
1.5mm
Typical Turn-On Delay Time:
7 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.3V
Maximum Drain Source Resistance:
280 μΩ
