Category:
Power MOSFET
Dimensions:
10.36 x 4.52 x 9.45mm
Maximum Continuous Drain Current:
12 A
Transistor Material:
Si
Width:
4.52mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
650 V
Maximum Gate Threshold Voltage:
3.5V
Maximum Drain Source Resistance:
250 mΩ
Package Type:
TO-262
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
26 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1200 pF @ 100 V
Length:
10.36mm
Pin Count:
3
Typical Turn-Off Delay Time:
110 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
104 W
Series:
CoolMOS CP
Maximum Gate Source Voltage:
±20 V
Height:
9.45mm
Typical Turn-On Delay Time:
40 ns
Minimum Operating Temperature:
-55 °C
