Category:
Power MOSFET
Dimensions:
6.5 x 6.22 x 2.3mm
Maximum Continuous Drain Current:
90 A
Transistor Material:
Si
Width:
6.22mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2V
Package Type:
TO-252
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
125 nC @ 10 V
Channel Type:
P
Typical Input Capacitance @ Vds:
8670 pF @ -25 V
Length:
6.5mm
Pin Count:
3
Typical Turn-Off Delay Time:
140 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
137 W
Series:
OptiMOS P
Maximum Gate Source Voltage:
-16 V, 5 V
Height:
2.3mm
Typical Turn-On Delay Time:
17 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
6.8 mΩ
