Category:
Power MOSFET
Dimensions:
10.31 x 9.45 x 4.57mm
Maximum Continuous Drain Current:
140 A
Transistor Material:
Si
Width:
9.45mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TO-263
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
90 nC
Channel Type:
N
Typical Input Capacitance @ Vds:
7300 pF@ 20 V
Length:
10.31mm
Pin Count:
7
Forward Transconductance:
170S
Typical Turn-Off Delay Time:
40 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
167 W
Series:
OptiMOS 3
Maximum Gate Source Voltage:
±20 V
Height:
4.57mm
Typical Turn-On Delay Time:
27 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
2 mΩ
