Category:
Power MOSFET
Dimensions:
10.31 x 11.05 x 4.57mm
Maximum Continuous Drain Current:
180 A
Transistor Material:
Si
Width:
11.05mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Package Type:
TO-263
Number of Elements per Chip:
1
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
125 nC @ 4.5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
21000 pF @ 30 V
Length:
10.31mm
Pin Count:
7
Forward Transconductance:
248S
Typical Turn-Off Delay Time:
131 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
250 W
Series:
OptiMOS 3
Maximum Gate Source Voltage:
±20 V
Height:
4.57mm
Typical Turn-On Delay Time:
35 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
2.7 mΩ
