Category:
Power MOSFET
Dimensions:
10.65 x 4.9 x 16.15mm
Maximum Continuous Drain Current:
30 A
Transistor Material:
Si
Width:
4.9mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
650 V
Maximum Gate Threshold Voltage:
3.5V
Package Type:
TO-220FP
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
96 nC
Channel Type:
N
Typical Input Capacitance @ Vds:
2127 pF@ 100 V
Length:
10.65mm
Pin Count:
3
Typical Turn-Off Delay Time:
83 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
34 W
Series:
CoolMOS C6
Maximum Gate Source Voltage:
±30 V
Height:
16.15mm
Typical Turn-On Delay Time:
15 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
125 mΩ
