Infineon BSS225 N-channel MOSFET, 90 mA, 600 V SIPMOS, 3-Pin SOT-89

BSS225 Infineon  N-channel MOSFET, 90 mA, 600 V SIPMOS, 3-Pin SOT-89
Infineon

Product Information

Category:
Small Signal
Dimensions:
4.5 x 2.5 x 1.5mm
Maximum Continuous Drain Current:
90 mA
Transistor Material:
Si
Width:
2.5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
2.3V
Package Type:
SOT-89
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
3.9 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
99 pF@ 25 V
Length:
4.5mm
Pin Count:
3
Typical Turn-Off Delay Time:
62 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1 W
Series:
SIPMOS
Maximum Gate Source Voltage:
±20 V
Height:
1.5mm
Typical Turn-On Delay Time:
14 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
45 Ω
RoHs Compliant
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This is N-channel MOSFET 90 mA 600 V SIPMOS 3-Pin SOT-89 manufactured by Infineon. The manufacturer part number is BSS225. It is of small signal category . The given dimensions of the product include 4.5 x 2.5 x 1.5mm. While 90 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 2.5mm wide. The product offers single transistor configuration. It has a maximum of 600 v drain source voltage. The product carries 2.3v of maximum gate threshold voltage. The package is a sort of sot-89. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 3.9 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 99 pf@ 25 v . Its accurate length is 4.5mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 62 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 1 w maximum power dissipation. The product sipmos, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 1.5mm. In addition, it has a typical 14 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 45 ω maximum drain source resistance.

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BSS225, SIPMOS® Small-Signal-Transistor MOSFET(Technical Reference)

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You will get a confirmation email regarding your order of Infineon BSS225 N-channel MOSFET, 90 mA, 600 V SIPMOS, 3-Pin SOT-89. You can also check on our website or by contacting our customer support team for further order details on Infineon BSS225 N-channel MOSFET, 90 mA, 600 V SIPMOS, 3-Pin SOT-89.
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Yes. We ship BSS225 Internationally to many countries around the world.