Category:
Small Signal
Dimensions:
4.5 x 2.5 x 1.5mm
Maximum Continuous Drain Current:
90 mA
Transistor Material:
Si
Width:
2.5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
2.3V
Package Type:
SOT-89
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
3.9 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
99 pF@ 25 V
Length:
4.5mm
Pin Count:
3
Typical Turn-Off Delay Time:
62 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1 W
Series:
SIPMOS
Maximum Gate Source Voltage:
±20 V
Height:
1.5mm
Typical Turn-On Delay Time:
14 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
45 Ω