Infineon BSS159N N-channel MOSFET, 230 mA, 60 V Depletion SIPMOS, 3-Pin SOT-23

BSS159N Infineon  N-channel MOSFET, 230 mA, 60 V Depletion SIPMOS, 3-Pin SOT-23
BSS159N
Infineon

Product Information

Category:
Small Signal
Dimensions:
2.9 x 1.3 x 1mm
Maximum Continuous Drain Current:
230 mA
Transistor Material:
Si
Width:
1.3mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
2.4V
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
1.4 nC @ 5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
29 pF @ 25 V
Length:
2.9mm
Pin Count:
3
Typical Turn-Off Delay Time:
9 ns
Mounting Type:
Surface Mount
Channel Mode:
Depletion
Maximum Power Dissipation:
0.36 W
Series:
SIPMOS
Maximum Gate Source Voltage:
±20 V
Height:
1mm
Typical Turn-On Delay Time:
3.1 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
8 Ω
RoHs Compliant
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This is N-channel MOSFET 230 mA 60 V Depletion SIPMOS 3-Pin SOT-23 manufactured by Infineon. The manufacturer part number is BSS159N. It is of small signal category . The given dimensions of the product include 2.9 x 1.3 x 1mm. While 230 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.3mm wide. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The product carries 2.4v of maximum gate threshold voltage. The package is a sort of sot-23. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 1.4 nc @ 5 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 29 pf @ 25 v . Its accurate length is 2.9mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 9 ns . The product is available in surface mount configuration. The product carries depletion channel mode. Provides up to 0.36 w maximum power dissipation. The product sipmos, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 1mm. In addition, it has a typical 3.1 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 8 ω maximum drain source resistance.

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BSS159N, SIPMOS Small-Signal-Transistor(Technical Reference)

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