Category:
Power MOSFET
Maximum Continuous Drain Current:
180 A
Transistor Material:
Si
Transistor Configuration:
Single
Maximum Drain Source Voltage:
75 V
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
4 mΩ
Package Type:
D2PAK
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
170 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
7580 pF@ 25 V
Pin Count:
7
Typical Turn-Off Delay Time:
92 ns
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
300 W
Series:
HEXFET
Maximum Gate Source Voltage:
±20 V
Height:
4.55mm
Typical Turn-On Delay Time:
21 ns
Minimum Operating Temperature:
-55 °C
