Category:
Power MOSFET
Dimensions:
5 x 5.9 x 1.1mm
Maximum Continuous Drain Current:
30 A
Transistor Material:
Si
Width:
5.9mm
Transistor Configuration:
Series
Maximum Drain Source Voltage:
30 V
Package Type:
Power 56
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1.1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
21 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1325 pF @ 15 V
Length:
5mm
Pin Count:
8
Typical Turn-Off Delay Time:
19 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.5 W
Series:
PowerTrench
Maximum Gate Source Voltage:
20 V
Height:
1.1mm
Typical Turn-On Delay Time:
7.7 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
8.7 mΩ
FET Feature:
Logic Level Gate
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.7V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs:
29nC @ 10V
Rds On (Max) @ Id, Vgs:
8mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C:
30A, 60A
Configuration:
2 N-Channel (Dual) Asymmetrical
Package:
Bulk
Drain to Source Voltage (Vdss):
30V
Input Capacitance (Ciss) (Max) @ Vds:
1765pF @ 15V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
8-PQFN (5x6)
Power - Max:
1W
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDMS3660
ECCN:
EAR99
