Category:
Power MOSFET
Dimensions:
6.5 x 6.22 x 2.3mm
Maximum Continuous Drain Current:
1.8 A
Transistor Material:
Si
Width:
6.22mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
5.5V
Package Type:
TO-252
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
7.3 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
240 pF@ 25 V
Length:
6.5mm
Pin Count:
3
Typical Turn-Off Delay Time:
35 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
25 W
Series:
CoolMOS S5
Maximum Gate Source Voltage:
±20 V
Height:
2.3mm
Typical Turn-On Delay Time:
35 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
3 Ω
