Category:
Power MOSFET
Dimensions:
5 x 4 x 1.5mm
Maximum Continuous Drain Current:
8.1 A
Transistor Material:
Si
Width:
4mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
1.1V
Maximum Drain Source Resistance:
23 mΩ
Package Type:
SOIC
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
0.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
11 nC @ 4.5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1020 pF @ 25 V
Length:
5mm
Pin Count:
8
Typical Turn-Off Delay Time:
34 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2 W
Series:
HEXFET
Maximum Gate Source Voltage:
±12 V
Height:
1.5mm
Typical Turn-On Delay Time:
5.9 ns
Minimum Operating Temperature:
-55 °C
